N-Channel MOSFET
SSRF02N65SL
Elektronische Bauelemente 2A , 650V , RDS(ON) 4.8Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product...
Description
SSRF02N65SL
Elektronische Bauelemente 2A , 650V , RDS(ON) 4.8Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSRF02N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
ITO-220
B
N
D E
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2
Drain
M
A
H
J K L
Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75
C G F
REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.95 2.34 2.74 2.40 3.60 φ 3.0 φ 3.4
L
REF. A B C D E F G
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Single Pulse Avalanche Energy
1
Symbol
VDS VGS TC=25° C TC=100° C ID IDM TC=25° C Derate above 25° C EAS TJ, TSTG PD
Rating
650 ±30 2 1.3 8 25 0.2 100 -55~150
Unit
V V A A A W mJ ° C
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case
Notes: 1. L=30mH,IAS=2.37A, VDD=60V, RG=25Ω, Starting TJ =25° C
RθJA RθJC
120 5
° C /W ° C /W
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Any changes of specification ...
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