SSPS7630N

SSPS7630N Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 19 mΩ Dual-N Channel Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. DFN3*3-8PP FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package DFN3*3-8PP MPQ 3K Leader Size 13’ inch REF. A B C D E F Millimeter Min. Max. 3.0 BSC. 3.2 BSC. 0.2 0.35 0.65 BSC. 0.1 0.25 3.0 BSC REF. G H I J K L Millimeter Min. Max. 0.7 0.9 1.1 BSC. 2.475 BSC 1.8 BSC. 0.3 0.5 0.52 BSC S G S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG TA = 25° C TA = 70° C Ratings 30 ±20 9.4 6.8 30 2.1 2.5 1.3 -55 ~ 150 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 Operating Junction & Storage Temperature Range Thermal Resistance Ratings Thermal Resistance Junction-ambien...