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SSN3043

SeCoS Halbleitertechnologie

N-Channel MOSFET

SSN3043 Elektronische Bauelemente 255mA , 20V , RDS(ON) 3.4Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Pro...


SeCoS Halbleitertechnologie

SSN3043

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Description
SSN3043 Elektronische Bauelemente 255mA , 20V , RDS(ON) 3.4Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. SOT-723 FEATURES Energy Efficient 1 GATE 2 SOURCE 3 DRAIN APPLICATION DC-DC converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. REF. A B C D E Millimeter Min. Max. 1.150 1.250 0.750 0.850 0.500 1.150 1.250 0.800TYP. REF. F G H I Millimeter Min. Max. 0.170 0.270 0.270 0.370 0 0.050 0.150 MARKING KA :Date Code Top View PACKAGE INFORMATION Package SOT-723 MPQ 8K Leader Size 7 inch THERMAL CHARACTERISTICS Parameter Drain – Source Voltage Gate – Source Voltage - Continuous Continuous Drain Current 1 Symbol VDS VGS TA=25° C TA=85° C ID Rating 20 ±10 255 185 285 440 Unit V V mA Steady State t≤ 5 s, TA=25° C Power Dissipation 1 Steady State ,TA=25°C t≤ 5 s, TA=25° C PD 545 210 155 310 400 286 260 -55 ~ 150 mW Continuous Drain Current Power Dissipation 2 2 Steady State TA=25° C TA=85° C ID PD IDM IS TL TJ, TSTG mA mW mA mA ° C ° C Steady State ,TA=25°C 2 Pulsed Drain Current (tp≤10µs) Source Current (Body Diode) Maximum Lead Temperature for Soldering Purposes, (1/8” from case for 10 seconds) Junction & Storage Temperature NOTE: 1. Surface−mou...




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