SMS501DE

Elektronische Bauelemente SMS501DE 0.03A, 600V, RDS(ON) 700 Ω N-Ch Depletion Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(on) and gate charge for most synchronous buck converter applications. FEATURES Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green device available MARKING 501DE PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.6 REF. 0.95 BSC. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current IDM Total Power Dissipation TC=25°C Derate above 25°C PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient Maximum Thermal Resistance from Junction to Case RθJA RθJC Rating 600 ±20 0.03 0.024 0.12 0.5 0.004 150, -55~150 250 50 Unit V V A A A W °C °C / W °C / W http://www.SeCoSGmbH.com/ 10-May-2016 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 Ele...