N-Channel MOSFET
Elektronische Bauelemente
SMS501DE
0.03A, 600V, RDS(ON) 700 Ω N-Ch Depletion Mode Power MOSFET
RoHS Compliant Product ...
Description
Elektronische Bauelemente
SMS501DE
0.03A, 600V, RDS(ON) 700 Ω N-Ch Depletion Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(on) and gate charge for most synchronous buck converter applications.
FEATURES
Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green device available
MARKING
501DE
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7 inch
SOT-23
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50
REF.
G H J K L
Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20
0.6 REF. 0.95 BSC.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current
TC=25°C TC=100°C
ID
Pulsed Drain Current
IDM
Total Power Dissipation
TC=25°C Derate above 25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Ambient Maximum Thermal Resistance from Junction to Case
RθJA RθJC
Rating 600 ±20 0.03 0.024 0.12 0.5 0.004
150, -55~150
250 50
Unit V V A A A
W
°C
°C / W °C / W
http://www.SeCoSGmbH.com/
10-May-2016 Rev. B
Any changes of specification will not be informed individually.
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