SCS40STN

SCS40STN Elektronische Bauelemente 0.12 A, 40 V Silicon Epitaxial Planar Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection L C WBFBP-02C FEATURES ● ● ● ● Low diode capacitance Low forward voltage Guard ring protected High breakdown voltage M B A E F D J H M G K APPLICATION ● ● ●  REF. A B C D E F Millimeter Min. Max. 0.950 1.050 0.550 0.650 0.450 0.550 0.450 REF. 0.400 REF. 0.275 0.325 REF. G H J K L M  Millimeter Min. Max. 0.275 0.325 0.275 0.325 0.275 0.325 0.675 0.725 0.010 0.070 0.010 REF. Ultra high-speed switching Voltage clamping Mobile communication ,digital (still) cameras , PDAs and PCMCIA cards MARKING S6 PACKAGE INFORMATION Package WBFBP-02C MPQ 10K Leader Size 7 inch MAXIMUM RATINGS CHARACTERISTICS(TA=25°C unless otherwise specified) Parameter DC reverse voltage Forward continuous current Peak forward surge current @ Tp< 10ms Junction, Storage Temperature Range Symbol VR IF IFSM TJ, TSTG Limits 40 120 200 150, -55 ~ 150 Unit V mA mA ℃ ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Forward Voltage Symbol VF Min. - Typ. - Max. 0.38 0.5 1 1 10 5 Unit V Test Conditions IF=1mA IF=10mA IF=40mA VR=30V VR=40V VR =0, f=1.0MHz Reverse Current1 Diode capacitance Note: 1. Pulse Test: tp=300μs; δ=0.02. IR Cd μA pF http://www.SeCoSGmbH.com/ Any changes of specification will ...