Document
KS05B4
Elektronische Bauelemente VOLTAGE: 5.0 V
Ulta Low Capacitance double rail-to-rail ESD protection diode
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
. Low Capacitance rail-to-rail ESD protection in a small package designed to protect.
two hi-speed data line or high-frequency signal lines from the damage caused by ESD and other transients.
DESCRIPTION
SOT-143
.075(1.90) Ref .023Re f (0.57)Re f .018(0.45) .014(0.35) .033(0.84) .030(0.76) .100(2.55) .089(2.25) .055(1.40) .047(1.20) 10 o 0
o
. Response time is typically < 1 ns . Low leakage . Stand-off voltage:5.0V . IEC61000-4-2 level 4 ESD protection
. Ulta Low Capacitance : 1pF (I/O to ground)
FEATURES
.
(0.40)Ref .016 Ref .071(1.80) .063(1.60) .118(3.00) .110(2.80) .006(0.16) .003(0.08) .004(0.10) .000(0.00) .043(1.10) .035(0.90)
.051(1.30) .039(1.00)
. Digital Video Interface (DVI)/ High Definition Multimedia Interface (HDMI) interfaces. . Wide Area Network (WAN)/ Local Area Network(LAN) systems. . Cellular phones, MP3 players, digital cameras ... etc. . Suitable for electronics where board space is a major design consideration.
APPLICATION
Dimensions in inches and (millimeters)
4
3
1
2
Rating 25 C ambient temperature unless otherwise specified.
o
MAXIMUM RATINGS
PARAMETER
IEC61000-4-2, Level 4(ESD) Lead Solder Temperature - Max. (10 sec duration) Junction Temperature Range Storage Temperature Range Air Contact
SYMBOL VESD TL TJ TSTG
LIMITS >16 >8 260 -55 ~ +125 -55 ~ +125
UNITS kV
o
C C C
o
o
Stresses exceeding "Maximum Ratings" may damage the device. "Maximum Ratings" are stress ratings only. Functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
PARAMETER
Reverse Stand-Off Voltage Reverse Leakage Current Breakdown Voltage Diode Capacitance Forward Voltage SYMBOL VRWM IR VBR Cz CI/O VF
(T = 25 o C unless otherwise noted, Per Diode)
Min. 6.1 Typ. Max. 5.0 100 8.5 UNIT V nA V pF V VRWM = 3 V IT = 1mA F=1MHz,VR=0V , Pin 2,3 to Pin1 F=1MHz,VR=0V , Pin 4 to Pin1 TEST CONDITIONS
1 36 0.7
IF=1mA
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Any changing of specification will not be informed individual Page 1 of 2
24-Sep-2007 Rev. B
KS05B4
Elektronische Bauelemente VOLTAGE: 5.0 V
Ulta Low Capacitance double rail-to-rail ESD protection diode
Clamping Voltage vs. Peak Pulse Current
14
Typical Capacitance vs. Voltage
2.0
Clamping Voltage - Vc (V)
12 10 8 6 4 2 0
1.6
Capacition (pF)
1.2
1.0
0.8
0.4 0 0 2 4 6 8 10 12 0 1 2
3
4
5
Peak Pulse Current- Ipp (A)
I/O to I/O Voltage (V)
110 100 90 80
Pulse Waveform
Wave form Paramete rs: tr = 8 s td = 20 s e
-t
Percent of I PP
70 60 50 40 30 20 10 0 0 5 10
Recommended Pad Layout
td = I PP /2
0.80 (.032") 1.00 (.040")
1.40 (.055")
15 20 25 30
MAX
Time (us)
3.40 (.134") 2.20 3.60 (.140") (.087") REF
1.90 (.075") 1.70 (.067")
BSC
1.00 (.040") 1.20 (.048")
0.80 (.032") 1.00 (.040")
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Any changing of specification will not be informed individual Page 2 of 2
24-Sep-2007 Rev. B
.