20V N-Channel Enhancement Mode MOSFET
CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
Spec. No. : C323N3 Issued Date : 2013.12.27 Revised Dat...
Description
CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
Spec. No. : C323N3 Issued Date : 2013.12.27 Revised Date : Page No. : 1/8
MTA55N02N3
Features
Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free lead plating and halogen-free package
BVDSS ID RDSON(MAX)@VGS=4.5V, ID=3.6A RDSON(MAX)@VGS=2.5V, ID=3.1A
20V 3.6A 29mΩ(typ.) 39mΩ(typ.)
Symbol
MTA55N02N3
Outline
SOT-23 D
G:Gate S:Source D:Drain
G
S
Ordering Information
Device MTA55N02N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name
MTA55N02N3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Spec. No. : C323N3 Issued Date : 2013.12.27 Revised Date : Page No. : 2/8
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Operating Junction and Storage Temperature
Symbol VDS VGS ID IDM PD Tj, Tstg
Limits 20 ±12 3.6 2.9 10 1.38 (Note 3) 0.01 -55~+150
Unit V V A A A W W/°C °C
Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3...
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