VS-MBR1035PbF

VS-MBR10...PbF Series, VS-MBR10...-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 10 A FEATURES Base cathode 2 TO-220AC 1 Cathode 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AC 10 A 35 V, 45 V 0.57 V 15 mA at 125 °C 150 °C Single die 8 mJ 150 °C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) IFRM VRRM IFSM VF TJ tp = 5 μs sine 10 Apk, TJ = 125 °C Range CHARACTERISTICS Rectangular waveform TC = 135 °C VALUES 10 20 35/45 1060 0.57 - 65 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR 35 VRWM 35 45 45 V VS-MBR1035PbF VS-MBR1035-N3 VS-MBR1045PbF VS-MBR1045-N3 UNITS ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forwa...