Power MOSFET
PD - 95425B
IRFR4104PbF IRFU4104PbF
HEXFET® Power MOSFET
Features
l l l l l l
Advanced Process Technology Ultra Low On...
Description
PD - 95425B
IRFR4104PbF IRFU4104PbF
HEXFET® Power MOSFET
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
D
VDSS = 40V RDS(on) = 5.5mΩ
G S
ID = 42A
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
D-Pak IRFR4104PbF
I-Pak IRFU4104PbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM
Max.
119 84 42 480 140
Units
A
PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested )
W W/°C V mJ A mJ
d
0.95 ± 20
IAR EAR TJ TSTG
Avalanche Current
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
Ã
h
145 310 See Fig.12a, 12b, 15, 16 -55 to + 175
g
°C 300 (1.6mm from case ) 10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds Mounting To...
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