PSHM40

ECO-PACTM 2 CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base PSHM 40/06 ID25 VDSS RDSon = 38 A = 600 V = 70 mΩ 1) L4 L6 L9 P18 R18 A1 E10 F10 K12 NTC K13 Preliminary Data Sheet MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Maximum Ratings 600 V ±20 V 38 A 25 A 6 V/ns 1.8 1 J mJ Features ECO-PAC 2 with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - solderable pins for DCB mounting fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density UL registered, E 148688 Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID90 70 m Ω VDS = 20 V; ID = 3 mA; 3.5 5.5 V VDS = VDSS; VGS = 0 V; TVJ = 25°C 25 µA TVJ = 125°C 60 µA VGS = ±20 V; VDS = 0 V 100 nA 220 nC 55 nC VGS= 10 V; VDS = 350 V; ID = 50 A 125 nC 30 ns 95 ns VGS= 10 V; VDS = 380 V; 100 ns ID = 25 A; RG = 1.8 Ω 10 ns (reverse conduction) IF = 20 A; VGS = 0 V 0.9 1.1 V per MOSFET 0.45 K/W RDSon VGSth...