Document
SEMiX151GAL12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GAL12E4s
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognized, file no. E63532
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES tpsc Tj
VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint
IC = 150 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel
VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 6 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V Tj = 25 °C
Values
1200 232 179 150 450 -20 ... 20
10
-40 ... 175
189 141 150 450 900 -40 ... 175
189 141 150 450 900 -40 ... 175
600 -40 ... 125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A A A A A °C
A °C V
min.
typ.
max. Unit
1.8
2.05
V
2.2
2.4
V
0.8
0.9
V
0.7
0.8
V
6.7
7.7
m
10.0
10.7 m
5
5.8
6.5
V
2.0
mA
mA
9.3
nF
0.58
nF
0.51
nF
850
nC
5.00
GAL
© by SEMIKRON
Rev. 3 – 03.07.2013
1
SEMiX151GAL12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GAL12E4s
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognized, file no. E63532
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C
Characteristics
Symbol td(on) tr Eon td(off) tf
Eoff
Conditions
VCC = 600 V
Tj = 150 °C
IC = 150 A VGE = ±15 V RG on = 1 RG off = 1
Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 3900 A/µs Tj = 150 °C
di/dtoff = 2000 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 150 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 150 °C
VF0
chiplevel
Tj = 25 °C Tj = 150 °C
rF
IRRM Qrr Err Rth(j-c)
chiplevel
Tj = 25 °C Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3400 A/µs VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Freewheeling diode
VF = VEC
IF = 150 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 150 °C
VF0
chiplevel
Tj = 25 °C Tj = 150 °C
rF
IRRM Qrr Err Rth(j-c)
chiplevel
Tj = 25 °C Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3400 A/µs VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Module
LCE RCC'+EE'
res., terminal-chip TC = 25 °C TC = 125 °C
Rth(c-s)
per module
Ms
to heat sink (M5)
Mt
to terminals (M6)
min.
1.1 0.7 4.3 6.7
1.1 0.7 4.3 6.7
3 2.5
typ. 204 42 16.6 468 91 18.4
2.1 2.1 1.3 0.9 5.6 7.8 115 23 8.9
2.1 2.1 1.3 0.9 5.6 7.8 115 23 8.9
16 0.7 1 0.075
max.
0.19 2.46 2.4 1.5 1.1 6.4 8.5
0.31 2.46 2.4 1.5 1.1 6.4 8.5
0.31
5 5
w
Temperature Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
145
493 ± 5% 3550 ±2%
Unit ns ns mJ ns ns mJ K/W
V V V V m m A µC mJ K/W
V V V V m m A µC mJ K/W
nH m m K/W Nm Nm Nm
g
K
GAL 2
Rev. 3 – 03.07.2013
© by SEMIKRON
SEMiX151GAL12E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 3 – 03.07.2013
3
SEMiX151GAL12E4s
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 3 – 03.07.2013
© by SEMIKRON
SEMiX151GAL12E4s
SEMiX 1s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefo.