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SEMiX151GAL12E4s Dataheets PDF



Part Number SEMiX151GAL12E4s
Manufacturers Semikron International
Logo Semikron International
Description IGBT
Datasheet SEMiX151GAL12E4s DatasheetSEMiX151GAL12E4s Datasheet (PDF)

SEMiX151GAL12E4s SEMiX® 1s Trench IGBT Modules SEMiX151GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc.

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SEMiX151GAL12E4s SEMiX® 1s Trench IGBT Modules SEMiX151GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Freewheeling diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C Values 1200 232 179 150 450 -20 ... 20 10 -40 ... 175 189 141 150 450 900 -40 ... 175 189 141 150 450 900 -40 ... 175 600 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A A A A A °C A °C V min. typ. max. Unit 1.8 2.05 V 2.2 2.4 V 0.8 0.9 V 0.7 0.8 V 6.7 7.7 m 10.0 10.7 m 5 5.8 6.5 V 2.0 mA mA 9.3 nF 0.58 nF 0.51 nF 850 nC 5.00  GAL © by SEMIKRON Rev. 3 – 03.07.2013 1 SEMiX151GAL12E4s SEMiX® 1s Trench IGBT Modules SEMiX151GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C Characteristics Symbol td(on) tr Eon td(off) tf Eoff Conditions VCC = 600 V Tj = 150 °C IC = 150 A VGE = ±15 V RG on = 1  RG off = 1  Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 3900 A/µs Tj = 150 °C di/dtoff = 2000 A/µs Tj = 150 °C Rth(j-c) per IGBT Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel Tj = 25 °C Tj = 150 °C VF0 chiplevel Tj = 25 °C Tj = 150 °C rF IRRM Qrr Err Rth(j-c) chiplevel Tj = 25 °C Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3400 A/µs VGE = -15 V Tj = 150 °C VCC = 600 V Tj = 150 °C per diode Freewheeling diode VF = VEC IF = 150 A VGE = 0 V chiplevel Tj = 25 °C Tj = 150 °C VF0 chiplevel Tj = 25 °C Tj = 150 °C rF IRRM Qrr Err Rth(j-c) chiplevel Tj = 25 °C Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3400 A/µs VGE = -15 V Tj = 150 °C VCC = 600 V Tj = 150 °C per diode Module LCE RCC'+EE' res., terminal-chip TC = 25 °C TC = 125 °C Rth(c-s) per module Ms to heat sink (M5) Mt to terminals (M6) min. 1.1 0.7 4.3 6.7 1.1 0.7 4.3 6.7 3 2.5 typ. 204 42 16.6 468 91 18.4 2.1 2.1 1.3 0.9 5.6 7.8 115 23 8.9 2.1 2.1 1.3 0.9 5.6 7.8 115 23 8.9 16 0.7 1 0.075 max. 0.19 2.46 2.4 1.5 1.1 6.4 8.5 0.31 2.46 2.4 1.5 1.1 6.4 8.5 0.31 5 5 w Temperature Sensor R100 Tc=100°C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 145 493 ± 5% 3550 ±2% Unit ns ns mJ ns ns mJ K/W V V V V m m A µC mJ K/W V V V V m m A µC mJ K/W nH m m K/W Nm Nm Nm g  K GAL 2 Rev. 3 – 03.07.2013 © by SEMIKRON SEMiX151GAL12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 03.07.2013 3 SEMiX151GAL12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 3 – 03.07.2013 © by SEMIKRON SEMiX151GAL12E4s SEMiX 1s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefo.


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