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SMK1430DI

KODENSHI KOREA

Advanced N-Ch Power MOSFET

SMK1430DI Advanced N-Ch Power MOSFET SWITCHING REGURATOR APPLICATIONS Features • • • • High Voltage : BVDSS=300V(Min.) ...


KODENSHI KOREA

SMK1430DI

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SMK1430DI Advanced N-Ch Power MOSFET SWITCHING REGURATOR APPLICATIONS Features High Voltage : BVDSS=300V(Min.) Low Crss : Crss=19pF(Typ.) Low gate charge : Qg=24nC(Typ.) Low RDS(on) : RDS(on)=0.29Ω(Max.) PIN Connection D D Ordering Information Type No. SMK1430DI Marking SMK1430 Package Code D2-PAK G S G S D2-PAK Marking Diagram Column 1 : Manufacturer AUK GYMDD SMK1430 Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID TC=25°C TC=100°C IDM PD IAS EAS IAR EAR TJ Tstg Rating 300 ±30 14 8.4 90 140 14 800 14 25 150 -55~150 Unit V V A A A W A mJ A mJ °C Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 0.89 62.5 Unit °C/W KSD-T6S002-003 1 SMK1430DI Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacita...




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