SMK0850F
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
• • • • High Voltage : BVDSS=500V(Min.) L...
SMK0850F
Advanced N-Ch Power MOSFET
SWITCHING
REGULATOR APPLICATIONS Features
High Voltage : BVDSS=500V(Min.) Low Crss : Crss=23pF(Typ.) Low gate charge : Qg=30nC(Typ.) Low RDS(on) : RDS(on)=0.8Ω(Max.)
G Package Code TO-220F-3L GD S TO-220F-3L
PIN Connection
D
Ordering Information
Type No. SMK0850F Marking SMK0850
S
Marking Diagram
Column 1 : Manufacturer
AUK AUK GYMDD YMDD Δ SMK0850 SDB20D45
Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ①
*
Symbol
VDSS VGSS ID TC=25℃ TC=100℃ IDM PD IAS EAS IAR EAR TJ Tstg
Rating
500 ±30 8 4.5 32 40 8 360 8 7.5 150 -55~150
Unit
V V A A A W A mJ A mJ °C
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-A)
Typ.
-
Max.
3.12 62.5
Unit
℃/W
KSD-T0O036-002
1
SMK0850F
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance...