RB717F

RB717F Diodes Schottky barrier diode RB717F zApplications Low current rectification z External dimensions (Unit : mm) z Land size figure (Unit : mm) r r r zFeatures 1) Small mold type. (UMD3) 2) Low VF 3) High reliability.   r r   /KP   r r r zStructure zConstruction Silicon epitaxial planar z Taping specifications (Unit : mm) zAbsolute maximum ratings (Ta=25qC) Parameter Reverse voltage (repetitive peak) Reevrse voltage (DC) Average rectifoed forward currenẗ́*1ͅ Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 30 200 125 -40 to +125 Unit V V mA mA (*1) Rating of per diode zElectrical characteristics (Ta=25qC) Parameter Symbol Forward voltage VF Reverse current IR Min. - Typ. 2.0 Max. 0.37 1 - Unit V μA pF Conditions IF=1mA VR=10V VR=1V,f=1MHz Capacitance between terminals Ct Rev.B ฦ࡝࡯࠼ߣ߽ Each lead has same dimension หኸᴺ 1/3 RB717F Diodes zElectrical characteristic curves (Ta=25qC) Rev.B 2/3 RB717F Diodes ...