Dual N-Channel Power MOSFET
NVMFD5877NL
MOSFET – Power, Dual N-Channel, Logic Level, Dual SO8FL
60 V, 39 mW, 17 A
Features
• Low RDS(on) to Minimi...
Description
NVMFD5877NL
MOSFET – Power, Dual N-Channel, Logic Level, Dual SO8FL
60 V, 39 mW, 17 A
Features
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
"20 V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJ−mb (Notes 1, 2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJ−mb (Notes 1, 2, 3)
Tmb = 100°C
17
A
12
23
W
12
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1 & 3, 4)
Steady TA = 100°C
Power Dissipation RqJA (Notes 1, 3)
State TA = 25°C
PD
TA = 100°C
6
A
5
3.2
W
1.6
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
74
A
Operating Junction and Storage Temperature
TJ, Tstg −55 to °C +175
Source Current (Body Diode)
Single Pulse Drain− to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, RG = 25 W)
(IL(pk) = 14.5 A, L = 0.1 mH) (IL(pk) = 6.3 A, L = 2 mH)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
19
A
EAS
10.5 mJ
40
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability m...
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