Document
TSM4459
30V P-Channel MOSFET
SOP-8
Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
-30 5.2 @ VGS = -10V 9.5 @ VGS = -4.5V
ID (A)
-17
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● DC-DC Converter Battery Power System
Ordering Information
Part No. Package Packing
TSM4459CS RLG SOP-8 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product P-Channel MOSFET
Absolute Maximum Rating (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation
Note a.
Symbol
VDS VGS TA = 25 C TA = 70 C TA = 25 C TA = 70 C
o o o o
Limit
-30 ±20 -17 -13.6 -68 2.5 1.6 +150 - 55 to +150
Unit
V V A A W
o o
ID IDM PD TJ TJ, TSTG
Operating Junction Temperature Operating Junction and Storage Temperature Range
C C
Thermal Performance
Parameter
Note a.
Symbol
Limit
50
Unit
o
Junction to Ambient Thermal Resistance RӨJA Notes: 2 a. The Device Surface Mounted on 1inch FR4 Board with 2oz copper.
C/W
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Version: A12
TSM4459
30V P-Channel MOSFET
Electrical Specifications (TA = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -15V, RL = 15Ω, VGEN = -10V, td(on) tr td(off) tf ----75.2 33.8 275 92.1 ----nS
a
Conditions
VGS = 0V, ID = -250uA VDS = VGS, ID = -250µA VGS = ±20V, VDS = 0V VDS = -30V, VGS = 0V VGS = -10V, ID = -9A VGS = -4.5V, ID = -9A IS = -18A, VGS = 0V
Symbol
BVDSS VGS(TH) IGSS IDSS RDS(ON) VSD Qg Qgs Qgd Rg Ciss Coss Crss
Min
-30 -1 -------------
Typ
----4 7 0.8 78.4 25.1 38.7 2.88 6205 963 330
Max
--3 ±100 -1.0 5.2 9.5 ---------
Unit
V V nA µA mΩ V
VDS = -24V, ID = -17A, VGS = -4.5V f = 1.0MHz VDS = -15V, VGS = 0V, f = 1.0MHz
nC Ω pF
RG = 4.7Ω Turn-Off Fall Time Notes: a. pulse test: PW ≤300µS, duty cycle ≤2%
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Version: A12
TSM4459
30V P-Channel MOSFET
SOP-8 Mechanical Drawing
DIM A B C D F G K M P R
SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019
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Version: A12
TSM4459
30V P-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: A12
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