11A N-Channel MOSFET
AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
General Description
The AOT11N60 & AOTF11N60 have been fabricated using an...
Description
AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
General Description
The AOT11N60 & AOTF11N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V@150℃ 11A < 0.65Ω
100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11N60L & AOTF11N60L
Top View TO-220 TO-220F D
G D S AOTF11N60 G D S S
AOT11N60
G
C unless otherwise noted Absolute Maximum Ratings TA=25° AOT11N60 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D
C
AOTF11N60 600 ±30 11* 8* 39 4.8 345 690 5 50 0.4 -55 to 150 300
AOTF11N60L
Units V V
VGS TC=25° C TC=100° C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS AOT11N60 65 0.5 0.46 272 2.2 11 8
11* 8* A A mJ mJ V/ns W W/ oC ° C ° C AOTF11N60L 65 -3.3 Units ° C/W ° C/W ° C/W
37.9 0.3
AOTF11N60 65 -...
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