IRF640

IRF640, SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single D FEATURES 200 0.18 Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 200 ± 20 18 11 72 1.0 580 18 13 125 5.0 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Pea...