N-Channel MOSFET
FDC8878 N-Channel PowerTrench® MOSFET
FDC8878
N-Channel PowerTrench® MOSFET
30 V, 8.0 A, 16 mΩ
April 2015
Features
G...
Description
FDC8878 N-Channel PowerTrench® MOSFET
FDC8878
N-Channel PowerTrench® MOSFET
30 V, 8.0 A, 16 mΩ
April 2015
Features
General Description
Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.
Applications
Primary Switch
S D D
Pin 1
G D D
SuperSOTTM -6
S4 D5 D6
3G 2D 1D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
-Continuous
TA = 25 °C
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1a) (Note 1b)
Ratings 30 ±20 8.0 8.0 32 1.6 0.8
-55 to +150
Units V V
A
W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
30
(Note 1a)
78
°C/W
Device Marking .888
Device FDC8878
Package SSOT-6
Reel Size 7 ’’
Tape Width 8 mm
Quantity 3000 units
©2012 Fairchild Semiconductor Corporation
1
FDC8878 Rev.1.4
www.fairchildsemi.com
FDC8878 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
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