FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET
May 2013
FDC8601
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 2.7 A, 109 mΩ
Features
Shielded Gate MOSFET Technology Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and curr...
