Document
BCW61 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) 3
Top View
Mounting Pad Layout
.056 (1.43) .052 (1.33)
Pin Configuration
1. Base 2. Emitter 3. Collector
0.031 (0.8)
1
2
0.035 (0.9) 0.079 (2.0)
.007 (0.175) .005 (0.125)
.037(0.95) .037(0.95)
max. .004 (0.1)
.045 (1.15) .037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6) .094 (2.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking BCW61A = BA Code: BCW61B = BB BCW61C = BC BCW61D = BD Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box
Ratings at 25°C ambient temperature unless otherwise specified.
Features
• PNP Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary types, BCW60 Series NPN transistors are recommended.
Maximum Ratings & Thermal Characteristics
Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Peak Collector Current Base Current (DC) Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Air
Note: (1) Mounted on FR-4 printed-ciruit board.
Symbol –VCES –VCEO –VEBO –I C – ICM – IB Ptot Tj TSTG RθJA
Value 32 32 5.0 100 200 50 250 150 –65 to +150 500(1)
Unit V V V mA mA mA mW °C °C °C/W
Document Number 88171 09-May-02
www.vishay.com 1
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
DC Current Gain at –VCE = 5 V, –IC = at –VCE = 5 V, –IC = at –VCE = 5 V, –IC = at –VCE = 5 V, –IC = at at at at at at at at –VCE = –VCE = –VCE = –VCE = –VCE = –VCE = –VCE = –VCE = 5 V, 5 V, 5 V, 5 V, 1 V, 1 V, 1 V, 1 V, –IC = –IC = –IC = –IC = –IC = –IC = –IC = –IC = 10 10 10 10 2 2 2 2 µA µA µA µA
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE –VCEsat –VCEsat –VBEsat –VBEsat –VBE –VBE –VBE – ICES
Min. – 30 40 100 120 180 250 380 60 80 100 110 60 120 600 680 600 – – – – – 100 – – – – – – – – –
TYP. – – – – – – – – – – – – – – – – 650 550 720 – – – – 4.5 11 2 200 260 330 520 85 480
Max. – – – – 220 310 460 630 – – – – 250 550 850 1050 750 – – 20 20 20 – – – 6
Unit – – – – – – – – – – – – mV mV mV mV mV mV mV nA µA nA MHz pF pF dB
mA mA mA mA mA mA mA mA
50 50 50 50
Collector-Emitter Saturation Voltage at –IC = 10 mA, –IB = 0.25 mA at –IC = 50 mA, –IB = 1.25 mA Base-Emitter Saturation Voltage at –IC = 10 mA, –IB = 0.25 mA at –IC = 50 mA, –IB = 1.25 mA Base-Emitter Voltage at –VCE = 5 V, –IC = 2 mA at –VCE = 5 V, –IC = 10 µA at –VCE = 1 V, –IC = 50 mA Collector-Emiter Cut-off Current at –VCE = 32 V, VEB=0 at.