NCE55H12

Pb Free Product http://www.ncepower.com NCE55H12 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● ● ● Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220 top view Package Marking And Ordering Information Device Marking NCE55H12 Device NCE55H12 Device Package TO-220 Reel Size Tape width Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS Limit 55 ±20 120 85 420 200 1.33 1100 -55 To 175 Unit V V A A A W W/℃ mJ ℃ ID ID (100℃) IDM PD TJ,TSTG Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.2 Pb Free Product http://www.ncepower.com Thermal Characteristic T...