BZV55C75

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR ZENER DIODES BZV55C 3V6 to 75V SOD - 80C Mini MELF (LL-34) Polarity : Cathode is indicated by a blue band Hermetically Sealed, Glass Silicon Diodes ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION Average Forward Current (averaged Over any 20 ms period) Repetitive Peak Forward Current Total Power Dissipation up to Tflange=50ºC Up to Ta=50ºC and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Non-Repetitive Peak Reverse Power Dissipation t=100µs, Tj=150ºC Storage Temperature Junction Temperature Thermal Resistance From Junction to tie-point (flanges) From Junction to Ambient when Mounted on a Ceramic Substrate of 10 mm x 10 mm x 0.6 mm ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) Working Voltage* Temperature Device Differential * +/- 5% Coefficient Resistance VZ(V) Sz(mV/K) rdiff(Ω) @ IZ test=5mA @ IZ test=5mA @ IZ test=5mA min max max min max BZV55C 3V6 3.40 3.80 90 -3.5 0 BZV55C 3V9 3.70 4.10 90 -3.5 0 BZV55C 4V3 4.00 4.60 90 -3.5 0 BZV55C 4V7 4.40 5.00 80 -3.5 0.2 BZV55C 5V1 4.80 5.40 60 -2.7 1.2 BZV55C 5V6 5.20 6.00 40 -2.0 2.5 BZV55C 6V2 5.80 6.60 10 0.4 3.7 BZV55C 6V8 6.40 7.20 15 1.2 4.5 BZV55C 7V5 7.00 7.90 15 2.5 5.3 BZV55C 8V2 7.70 8.70 15 3.2 6.2 BZV55C 9V1 8.50 9.60 15 3.8 7.0 BZV55C 10 9.40 10.60 20 4.5 8.0 BZV55C 11 10.40 11.60 20 5.4 9.0 BZV55C 12 11.40 12.70 25 6.0 10.0 BZV55C 13 12.40 14.10 30 7.0 11.0 BZV55C 15 13.80 15.60 30 9...