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T1M5F400A Dataheets PDF



Part Number T1M5F400A
Manufacturers Lite-On
Logo Lite-On
Description Sensitive Gate Triacs
Datasheet T1M5F400A DatasheetT1M5F400A Datasheet (PDF)

LITE-ON SEMICONDUCTOR T1M5F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS TO-92 (TO-226AA) Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise I.

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LITE-ON SEMICONDUCTOR T1M5F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS TO-92 (TO-226AA) Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 20 V/msec at 110¢J ) Commutating di/dt of 1.6 Amps/msec at 110¢J High Surge Current of 12 Amps Pb-Free Package TO-92 (TO-226AA) TO-92 DIM. A MIN. 4.45 4.32 3.18 1.15 2.42 12.7 2.04 2.93 3.43 MAX. 4.70 5.33 4.19 1.39 2.66 -----2.66 --------- SEATING PLANE B C D E F G H I All Dimensions in millimeter PIN ASSIGNMENT 1 2 3 Main Terminal 1 Gate Main Terminal 2 MAXIMUM RATINGS (Tj= 25¢J unless otherwise noticed) Rating Peak Repetitive Off– State Voltage (TJ= -40 to 110¢J, Sine Wave, 50 to 60 Hz; Gate Open) T1M5F400A T1M5F600A VDRM, VRRM 400 600 Volts Symbol Value Unit On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = 50¢J) Peak Non-Repetitive Surge Current Full Cycle Sine Wave 60 Hz (Tj =25¢J) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power ( t ¡Ø 2.0us ,Tc = 80¢J) Average Gate Power (Tc = 80¢J , t ¡Ø 8.3 ms ) Peak Gate Current ( t ¡Ø 2.0us ,Tc = 80¢J) Peak Gate Voltage ( t ¡Ø 2.0us ,Tc = 80¢J) Operating Junction Temperature Range Storage Temperature Range IT(RMS) ITSM It PGM PG(AV) IGM VGM 2 1.0 12.0 0.60 5.0 0.1 1.0 5.0 -40 to +110 -40 to +150 Amp Amps As Watt Watt Amp Volts ¢J ¢J 2 TJ Tstg Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV. 2, Jun-2005, KTXD11 RATING AND CHARACTERISTIC CURVES T1M5F-A SERIES THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Lead - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RthJL RthJC RthJA Value 60 75 150 260 Unit ¢J/W ¢J TL ELECTRICAL CHARACTERISTICS (Tc=25¢J unless otherwise noted) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Reptitive Forward or Reverse Blocking Current (VD=Rated VDRM and VRRM; Gate OPen) Tj =25¢J Tj =110¢J IDRM IRRM ------------10 100 uA uA ON CHARACTERISTICS Peak Forward On-State Voltage (ITM=± 1A Peak @Tp ¡Ø2.0 ms, Duty Cycle ¡Ø 2%) VTM IGT1 IGT2 IGT3 IGT4 ------------------------------1.9 5.0 5.0 5.0 7.0 Volts Gate Trigger Current (Continuous dc) (VD = 12 Vdc; RL = 100 Ohms) mA Holding Current (VD = 12 V, Initiating Current = ± 200 mA, Gate Open) Turn-On Time (VD = Rated VDRM , ITM = 1.0 A pk, IG = 25 mA) IH ---- 1.5 10 mA tgt VGT1 VGT2 VGT3 VGT4 IL1 IL2 IL3 IL4 VGD ---------------------------0.1 2 0.66 0.77 0.84 0.88 1.6 10.5 1.5 2.5 ---- ---2.0 2.0 2.0 2.5 15 20 15 15 ---- us Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc; RL =100 Ohms) Volts Latching Current (VD=12V,IG= 10 mA) mA Gate Non-Trigger Voltage (VD= 12V, RL= 100 Ohms , TJ=110 ¢J) Volts DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD=Rated VDRM,Exponential Waveform, Gate Open, TJ=110¢J) dv/dt 20 60 ---V/us Repetitive Critical Rate of Rise of On-State Current Pulse Width = 20 us, IPKmax = 15 A, diG/dt = 1 A/us, f = 60 Hz Rate of Change of Commutating Current (V D = 400 V, I TM = .84 A, Commutating dv/dt = 1.5 V/us, Gate Open, T J = 110° C, f = 250 Hz, with Snubber) di/dt ---- ---- 10 A/us di/dt(c) 1.6 ---- ---- A/ms RATING AND CHARACTERISTIC CURVES T1M5F-A SERIES 110 110 a = 30° a = 30° Ta,AMBIENT TEMPERATURE(¢J) 100 100 Tc,CASE TEMPERATURE(¢J) 90 60° DC 90° 60° 90 90° DC 80 70 80 70 60 180° 180° 60 120° 50 40 30 20 0.00 120° 50 40 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 IT(RMS),RMS ON-STATE CURRENT(AMPS) IT(RMS),RMS ON-STATE CURRENT(AMPS) Figure 1. RMS Current Derating Figure 2. RMS Current Derating 1.2 DC Ta,AMBIENT TEMPERATURE(¢J) 1.0 180° 0.8 120° 0.6 90° 0.4 60° 0.2 a = 30° 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT(RMS),RMS ON-STATE CURRENT(AMPS) Figure 3. Power Dissipation RATING AND CHARACTERISTIC CURVES T1M5F-A SERIES 16 ITSM, PEAK SURGE CURRENT (AMPS) 12 8 4 TJ=25¢J f= 60MHz 0 1 10 100 NUMBER OF CYCLES Figure 6. Maximum Allowable Surge Current ¡·Specifications mentioned in this publication are subject to change without notice. .


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