2SK3511

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3511 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3511 2SK3511-S PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) Low Ciss: Ciss = 5900 pF TYP. Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 75 ±20 ±83 ±260 100 1.5 150 –55 to +150 52 250 V V A A W W °C °C A mJ (TO-262) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V (TO-263, TO-220SMD) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representa...