Document
MDF7N50 N-channel MOSFET 500V
MDF7N50
N-Channel MOSFET 500V, 7.0 A, 0.9Ω
General Description
The MDF7N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF7N50 is suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 500V ID = 7.0A RDS(ON) ≤ 0.9Ω @ VGS = 10V @ VGS = 10V
Applications
Power Supply HID Lighting
D
G
G
D
S
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy
(4) (1)
Symbol VDSS VGSS TC=25 C TC=100 C
o o
Rating 500 ±30 7.0 4.2 28 36 0.29 4.5 270 -55~150
Unit V V A A A W W/ oC V/ns mJ
o
ID IDM
TC=25oC Derate above 25 oC
PD Dv/dt EAS TJ, Tstg
Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(1) (1)
Symbol RθJA RθJC
Rating 62.5 3.5
Unit
o
C/W
Dec. 2009. Version 1.2
1
MagnaChip Semiconductor Ltd.
MDF7N50 N-channel MOSFET 500V
Ordering Information
Part Number MDF7N50TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤7.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=10mH, IAS=7.0A,
Symbol
Test Condition
Min
Typ
Max
Unit
BVDSS VGS(th) IDSS IGSS RDS(ON) gfs
ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 3.5A VDS = 30V, ID = 3.5A
500 3.0 -
0.76
5.0 1 100 0.9 -
V µA nA Ω S
-
7
Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf VGS = 10V, VDS = 250V, ID = 7.0A, RG = 25Ω(3) VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 400V, ID = 7.0A, VGS = 10V(3)
-
17.5 5 6.5 740 3.7 95.5 16.8 29.8 36.4 23.6
nC
pF
ns
IS VSD trr Qrr IS = 7.0A, VGS = 0V IF = 7.0A, dl/dt = 100A/µs(3)
-
7.0
1.4
A V ns µC
260 1.7
VDD=50V, Rg =25Ω, Starting TJ=25°C
Dec. 2009. Version 1.2
2
MagnaChip Semiconductor Ltd.
MDF7N50 N-channel MOSFET 500V
20 18 16
Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V
1.75
1.50
ID,Drain Current [A]
14 12 10 8 6 4 2 0 0
Notes 1. 250㎲ Pulse Test 2. TC=25℃
RDS(ON) [Ω ]
1.25
1.00
VGS=10.0V VGS=20V
0.75
0.50
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
VDS,Drain-Source Voltage [V]
ID,Drain Current [A]
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with Drain Current and Gate Voltage
1.8
1.2
※ Notes : 1. VGS = 10 V 2. ID = 5 A
RDS(ON), (Normalized) Drain-Source On-Resistance
1.6
BVDSS, (Normalized) Drain-Source Breakdown Voltage
※ Notes : 1. VGS = 0 V 2. ID = 250㎂
1.1
1.4
1.2
VGS=10V VGS=4.5V
1.0
1.0
0.9
0.8
0.6 -50
-25
0
25
50
75
o
100
125
150
0.8 -50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Fig.3 On-Resistance Variation with Temperature
Fig.4 Breakdown Voltage Variation vs. Temperature
100
* Notes ; 1. VDS=30V
※ Notes : 1. VGS = 0 V 2. ID = 250㎂
10
IDR Reverse Drain Current [A]
10 150℃ 25℃
ID [A]
1
150℃ -55℃ 25℃
1 4 5 6 7 8 9 10
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS [V]
VSD, Source-Drain Voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
Dec. 2009. Version 1.2
3
MagnaChip Semiconductor Ltd.
MDF7N50 N-channel MOSFET 500V
1600
10
※ Note : ID = 7.0A
100V
1400
Coss
1200
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VGS, Gate-Source Voltage [V]
250V
8
400V
Capacitance [pF]
1000
6
Ciss
800 600 400 200
4
2
Crss
※ Notes ; 1. VGS = 0 V 2. f = 1 MHz
0 0 2 4 6 8 10 12 14 16 18 20
0 0.1 1 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
10
2
8
10 µs
10
1
Operation in This Area is Limited by R DS(on)
100 µs 10 ms 100 ms 1s
10
0
DC
ID, Drain Current [A]
ID, Drain Current [A]
1 ms
6
4
10
-1
2
Single Pulse TJ=Max rated TC=25℃
10
-2
10
-1
10
0
10
1
10
2
0 25
50
75
100
.