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MDF7N50TH Dataheets PDF



Part Number MDF7N50TH
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF7N50TH DatasheetMDF7N50TH Datasheet (PDF)

MDF7N50 N-channel MOSFET 500V MDF7N50 N-Channel MOSFET 500V, 7.0 A, 0.9Ω General Description The MDF7N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF7N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 7.0A RDS(ON) ≤ 0.9Ω @ VGS = 10V @ VGS = 10V Applications Power Supply HID Lighting D G G D S S Absolute Maximum Ratings (Ta = 25oC) Ch.

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MDF7N50 N-channel MOSFET 500V MDF7N50 N-Channel MOSFET 500V, 7.0 A, 0.9Ω General Description The MDF7N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF7N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 7.0A RDS(ON) ≤ 0.9Ω @ VGS = 10V @ VGS = 10V Applications Power Supply HID Lighting D G G D S S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy (4) (1) Symbol VDSS VGSS TC=25 C TC=100 C o o Rating 500 ±30 7.0 4.2 28 36 0.29 4.5 270 -55~150 Unit V V A A A W W/ oC V/ns mJ o ID IDM TC=25oC Derate above 25 oC PD Dv/dt EAS TJ, Tstg Junction and Storage Temperature Range ※ Id limited by maximum junction temperature C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) (1) Symbol RθJA RθJC Rating 62.5 3.5 Unit o C/W Dec. 2009. Version 1.2 1 MagnaChip Semiconductor Ltd. MDF7N50 N-channel MOSFET 500V Ordering Information Part Number MDF7N50TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤7.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=10mH, IAS=7.0A, Symbol Test Condition Min Typ Max Unit BVDSS VGS(th) IDSS IGSS RDS(ON) gfs ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 3.5A VDS = 30V, ID = 3.5A 500 3.0 - 0.76 5.0 1 100 0.9 - V µA nA Ω S - 7 Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf VGS = 10V, VDS = 250V, ID = 7.0A, RG = 25Ω(3) VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 400V, ID = 7.0A, VGS = 10V(3) - 17.5 5 6.5 740 3.7 95.5 16.8 29.8 36.4 23.6 nC pF ns IS VSD trr Qrr IS = 7.0A, VGS = 0V IF = 7.0A, dl/dt = 100A/µs(3) - 7.0 1.4 A V ns µC 260 1.7 VDD=50V, Rg =25Ω, Starting TJ=25°C Dec. 2009. Version 1.2 2 MagnaChip Semiconductor Ltd. MDF7N50 N-channel MOSFET 500V 20 18 16 Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V 1.75 1.50 ID,Drain Current [A] 14 12 10 8 6 4 2 0 0 Notes 1. 250㎲ Pulse Test 2. TC=25℃ RDS(ON) [Ω ] 1.25 1.00 VGS=10.0V VGS=20V 0.75 0.50 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 VDS,Drain-Source Voltage [V] ID,Drain Current [A] Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 1.8 1.2 ※ Notes : 1. VGS = 10 V 2. ID = 5 A RDS(ON), (Normalized) Drain-Source On-Resistance 1.6 BVDSS, (Normalized) Drain-Source Breakdown Voltage ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.4 1.2 VGS=10V VGS=4.5V 1.0 1.0 0.9 0.8 0.6 -50 -25 0 25 50 75 o 100 125 150 0.8 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature 100 * Notes ; 1. VDS=30V ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 10 IDR Reverse Drain Current [A] 10 150℃ 25℃ ID [A] 1 150℃ -55℃ 25℃ 1 4 5 6 7 8 9 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS [V] VSD, Source-Drain Voltage [V] Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature Dec. 2009. Version 1.2 3 MagnaChip Semiconductor Ltd. MDF7N50 N-channel MOSFET 500V 1600 10 ※ Note : ID = 7.0A 100V 1400 Coss 1200 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 250V 8 400V Capacitance [pF] 1000 6 Ciss 800 600 400 200 4 2 Crss ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 0 0 2 4 6 8 10 12 14 16 18 20 0 0.1 1 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 10 2 8 10 µs 10 1 Operation in This Area is Limited by R DS(on) 100 µs 10 ms 100 ms 1s 10 0 DC ID, Drain Current [A] ID, Drain Current [A] 1 ms 6 4 10 -1 2 Single Pulse TJ=Max rated TC=25℃ 10 -2 10 -1 10 0 10 1 10 2 0 25 50 75 100 .


MDF7N50 MDF7N50TH A673


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