45DB011

Features Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram (Erase and Program) – 512 Pages (264 Bytes/Page) Main Memory Optional Page and Block Erase Operations One 264-Byte SRAM Data Buffer Internal Program and Control Timer Fast Page Program Time – 7 ms Typical 120 µs Typical Page to Buffer Transfer Time Low-Power Dissipation – 4 mA Active Read Current Typical – 2 µA CMOS Standby Current Typical 13 MHz Max Clock Frequency Hardware Data Protection Feature Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3 CMOS and TTL Compatible Inputs and Outputs Commercial and Industrial Temperature Ranges 1-Megabit 2.7-volt Only Serial DataFlash® AT45DB011 Preliminary Description The AT45DB011 is a 2.7-volt only, serial interface Flash memory suitable for in-system reprogramming. Its 1,081,344 bits of memory are organized as 512 pages of 264 bytes each. In addition to the main memory, the AT45DB011 also contains one SRAM data buffer of 264 bytes. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a serial interface to sequentially access its data. The simple serial interface facilitates hard(continued) Pin Configurations Pin Name CS SCK SI SO WP RESET RDY/BUSY Function Chip Select Serial Clock Serial Input Serial Output Hardware Page Write Protect Pin Chip Reset Ready/Busy PLCC CS NC NC GND VCC NC NC SOIC SI SCK...