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IRFB4620PbF Dataheets PDF



Part Number IRFB4620PbF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFB4620PbF DatasheetIRFB4620PbF Datasheet (PDF)

PD -96172 IRFB4620PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free TO-220AB IRFB4620PbF D G S VDSS RDS(on) typ. max. ID 200V 60m: 72.5m: 25A G D S Gate Drain Source A.

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PD -96172 IRFB4620PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free TO-220AB IRFB4620PbF D G S VDSS RDS(on) typ. max. ID 200V 60m: 72.5m: 25A G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 25 18 100 144 0.96 ± 20 54 -55 to + 175 300 10lb in (1.1N m) 113 See Fig. 14, 15, 22a, 22b, Units A W W/°C V V/ns °C c e x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy c d f mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mount) j Parameter Typ. Max. 1.045 62 Units °C/W ij ––– 0.50 ––– www.irf.com 1 09/05/08 IRFB4620PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG(int) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min. Typ. Max. Units 200 ––– ––– 3.0 ––– ––– ––– ––– ––– Conditions ––– 0.23 60 ––– ––– ––– ––– ––– 2.6 ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 5mA 72.5 mΩ VGS = 10V, ID = 15A 5.0 V VDS = VGS, ID = 100µA VDS = 200V, VGS = 0V 20 µA 250 VDS = 200V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA VGS = -20V -100 f ™ ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 37 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 25 8.2 7.9 17 13.4 22.4 25.4 14.8 1710 125 30 113 317 ––– 38 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– S Conditions Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) g hà VDS = 50V, ID = 15A ID = 15A VDS = 100V nC VGS = 10V ID = 15A, VDS =0V, VGS = 10V VDD = 130V ID = 15A ns RG = 7.3Ω VGS = 10V VGS = 0V VDS = 50V pF ƒ = 1.0MHz (See Fig.5) VGS = 0V, VDS = 0V to 160V (See Fig.11) VGS = 0V, VDS = 0V to 160V f f h g Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units ––– ––– ––– ––– 25 A 100 Conditions MOSFET symbol showing the integral reverse G D Ù Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time ––– ––– 1.3 V ––– 78 ––– ns ––– 99 ––– ––– 294 ––– nC TJ = 125°C ––– 432 ––– ––– 7.6 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) p-n junction diode. TJ = 25°C, IS = 15A, VGS = 0V TJ = 25°C VR = 100V, TJ = 125°C IF = 15A di/dt = 100A/µs TJ = 25°C f S f Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Limited by TJmax, starting TJ = 25°C, L = 1.0mH RG = 25 Ω, IAS = 15A, VGS =10V. Part not recommended for use above this value . ƒ ISD ≤ 15A, di/dt ≤ 634A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . † Coss eff. (ER) is a fixed capacitance that gives the same energy as ‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom ˆ Rθ is measured at TJ approximately 90°C Coss while VDS is rising from 0 to 80% VDSS. mended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRFB4620PbF 1000 TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 1000 TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 100 BOTTOM 10 BOTTOM 10 5.0V 1 5.0V 0.1 ≤60µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 1 ≤60µs PULSE WIDTH Tj = 175°C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 RDS(on) , Drain-to-S.


UCN-4203A IRFB4620PbF CYT3000A


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