SPP6308

SPP6308 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6308 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES  P-Channel -20V/1.0A,RDS(ON)=520mΩ@VGS=-4.5V -20V/0.8A,RDS(ON)=700mΩ@VGS=-2.5V -20V/0.7A,RDS(ON)=950mΩ@VGS=-1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-363 (SC-70-6L) package design PIN CONFIGURATION (SOT-363/SC-70-6L) PART MARKING 2020/04/14 Ver.3 Page 1 SPP6308 Dual P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 ORDERING INFORMATION Part Number Package SPP6308S36RGB SOT-363 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP6308S36RGB : Tape Reel ; Pb–Free ; Halogen –Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Dr...