SPN6335
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN6335 is the Dual N-Channel enhancement mode power fie...
SPN6335
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN6335 is the Dual N-Channel enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES N-Channel
20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 (SC-70-6L) package design
PIN CONFIGURATION( SOT-363 / SC-70-6L)
2020/04/14 Ver.4
PART MARKING 35YW
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SPN6335
Dual N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Description Source 1 Gate 1 Drain 2
Source 2 Gate 2 Drain1
ORDERING INFORMATION
Part Number
Package
SPN6335S36RGB
SOT-363
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN6335S36RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drai...