SPN8919

SPN8919 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8919 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8910 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Small Power Switching for MB/NB/VGA  Network DC/DC Power System  Load Switch FEATURES  100V/2A, RDS(ON)=180mΩ@VGS=10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-89 package design PIN CONFIGURATION SOT-89 PART MARKING 2020/04/17 Ver.3 Page 1 SPN8919 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN8919S89RGB SOT-89 ※ SPN8919S89RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPN8919 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM PD TJ TSTG RθJA Typical 100 ±20 2.8 2.2 10 1.5 150 -55/150 85 Unit V V A A W ℃ ℃ ℃/W 2020/04/17 V...