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SPN30T10 Dataheets PDF



Part Number SPN30T10
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN30T10 DatasheetSPN30T10 Datasheet (PDF)

SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN30T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Small Power Sys.

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SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN30T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Small Power System  DC/DC Converter  Load Switch FEATURES  100V/20A,RDS(ON)=45mΩ@VGS=10V  100V/15A,RDS(ON)=50mΩ@VGS=4.5V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L/PPAK5x6-8L package design PIN CONFIGURATION TO-252-2L PPAK5x6-8L PART MARKING 2020/04/30 Ver.4 Page 1 SPN30T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION (TO-252-2L) Pin 1 2 3 Symbol G D S Description Gate Drain Source PIN DESCRIPTION (PPAK5x6-8L) Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN30T10T252RGB TO-252-2L SPN30T10DN8RGB PPAK5x6-8L ※ SPN30T10T252RGB : Tape& Reel ; Pb – Free ; Halogen – Free ※ SPN30T10DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free Part Marking SPN30T10 SPN30T10 2020/04/30 Ver.4 Page 2 SPN30T10 N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TC=25℃ TC=70℃ Avalanche Current Power Dissipation @ Tc=25℃ (TO-252) Power Dissipation@ TC=25℃ (PPAK5X6) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient (PPAK5x6) Thermal Resistance-Junction to Ambient (TO-252) Symbol VDSS VGSS ID IDM IAS PD TJ TSTG RθJA RθJA Typical 100 ±20 22 16 45 27 52 40 150 -55/150 46 62 Unit V V A A A W ℃ ℃ ℃/W ℃/W 2020/04/30 Ver.4 Page 3 SPN30T10 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=80V,VGS=0V IDSS VDS=80V,VGS=0V TJ=125℃ ID(on) VDS≥5V,VGS=10V Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time VGS=10V,ID=20A RDS(on) VGS=4.5V,ID=15A gfs VDS=5V,ID=3A VSD IS=1A,VGS=0V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=15V,VGS=4.5V ID= 15A VDS=15V,VGS=0V f=1MHz VDD=50V,ID=1A, VGEN=10V RG=3.3Ω Min. Typ Max. Unit 100 V 1 2.5 ±100 nA 10 uA 100 22 A 45 mΩ 50 mΩ 68 S 1.2 V 55 7.5 nC 7 3850 137 pF 82 19 4 nS 84 5 2020/04/30 Ver.4 Page 4 SPN30T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 On-Resistance vs. Gate Voltage Fig. 3 Forward Characteristics of Reverse Diodes Fig. 4 Gate Charge Characteristics Fig. Vgs vs. Junction Temperature 2020/04/30 Ver.4 Fig. 6 On-resistance vs. Junction Temperature Page 5 SPN30T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform 2020/04/30 Ver.4 Fig. 11 Unclamped Inductive Waveform Page 6 SPN30T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/04/30 Ver.4 Page 7 .


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