Document
SPN30T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN30T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS High Frequency Small Power System DC/DC Converter Load Switch
FEATURES 100V/20A,RDS(ON)=45mΩ@VGS=10V 100V/15A,RDS(ON)=50mΩ@VGS=4.5V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current
capability TO-252-2L/PPAK5x6-8L package design
PIN CONFIGURATION
TO-252-2L
PPAK5x6-8L
PART MARKING
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SPN30T10
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION (TO-252-2L) Pin 1 2 3
Symbol G D S
Description Gate Drain Source
PIN DESCRIPTION (PPAK5x6-8L) Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN30T10T252RGB
TO-252-2L
SPN30T10DN8RGB
PPAK5x6-8L
※ SPN30T10T252RGB : Tape& Reel ; Pb – Free ; Halogen – Free ※ SPN30T10DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free
Part Marking
SPN30T10 SPN30T10
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SPN30T10
N-Channel Enhancement Mode MOSFET
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TC=25℃ TC=70℃
Avalanche Current Power Dissipation @ Tc=25℃ (TO-252) Power Dissipation@ TC=25℃ (PPAK5X6) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient (PPAK5x6) Thermal Resistance-Junction to Ambient (TO-252)
Symbol VDSS VGSS
ID
IDM IAS
PD TJ TSTG RθJA RθJA
Typical 100
±20 22 16 45
27 52 40 150 -55/150 46 62
Unit V V
A
A A
W
℃ ℃ ℃/W ℃/W
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SPN30T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=80V,VGS=0V IDSS VDS=80V,VGS=0V TJ=125℃
ID(on) VDS≥5V,VGS=10V
Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
VGS=10V,ID=20A RDS(on)
VGS=4.5V,ID=15A
gfs VDS=5V,ID=3A
VSD IS=1A,VGS=0V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=15V,VGS=4.5V ID= 15A
VDS=15V,VGS=0V f=1MHz
VDD=50V,ID=1A, VGEN=10V RG=3.3Ω
Min. Typ Max. Unit
100
V
1
2.5
±100 nA
10 uA
100
22
A
45 mΩ
50 mΩ
68
S
1.2 V
55
7.5
nC
7
3850
137
pF
82
19
4 nS
84
5
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SPN30T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
Fig. 1 Typical Output Characteristics
Fig. 2 On-Resistance vs. Gate Voltage
Fig. 3 Forward Characteristics of Reverse Diodes
Fig. 4 Gate Charge Characteristics
Fig. Vgs vs. Junction Temperature
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Fig. 6 On-resistance vs. Junction Temperature
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SPN30T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
Fig. 7 Typical Capacitance Characteristics
Fig. 8 Maximum Safe Operation Area
Fig. 9 Effective Transient Thermal Impedance
Fig. 10 Switching Time Waveform
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Fig. 11 Unclamped Inductive Waveform
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SPN30T10
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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