SPN11T10

SPN11T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN11T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN11T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  100V/12A, RDS(ON)=120mΩ@VGS=10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L,TO-251S-3L package design PIN CONFIGURATION TO-252-2L TO-251S-3L 2020/04/27 Ver.4 PART MARKING Page 1 SPN11T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN11T10T252RGB TO-252-2L SPN11T10T251TGB TO-251S-3L ※ SPN11T10T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ※ SPN11T10T251TGB : Tube ; Pb – Free ; Halogen - Free Part Marking SPN11T10 SPN11T10 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Avalanche Current TC=25℃ TC=70℃ Power Dissipation @ TA=25℃ Avalanche Energy, Single Pulse @ L=1mH, TA=25℃ Operating Junction Temperature Storage Temperature Range Therma...