SPN09T10

SPN09T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN09T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN09T10 APPLICATIONS  Powered System  DC/DC Converter  Load Switch has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. FEATURES  100V/8A,RDS(ON)=160mΩ@ VGS=10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L package design TO-252-2L PIN CONFIGURATION PART MARKING 2020/04/30 Ver.7 Page 1 SPN09T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN09T10T252RGB TO-252-2L ※ SPN09T10T252RGB : Tape Reel ; Pb – Free ; Halogen – Free Part Marking SPN09T10 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Avalanche Current Power Dissipation TA=25℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.14mH , IAS = 20A , VDD = 20V. ) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IAS PD EAS TJ...