SPN3009

SPN3009 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3009 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3009 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES  30V/51A,RDS(ON)=9mΩ@VGS=10V  30V/51A,RDS(ON)=13.5mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L/TO-251S-3L package design PIN CONFIGURATION TO-252-2L TO-251S-3L PART MARKING 2020/04/20 Ver 4 Page 1 SPN3009 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN3009ST251TGB TO-251S-3L SPN3009T252RGB TO-252-2L ※ SPN3009T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ※ SPN3009ST251TGB: Tube ; Pb–Free; Halogen–Free Part Marking SPN3009 SPN3009 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=100℃ Avalanche Current Single Pulse Avalanche Energy Power Dissipation TA=25℃ Operating Junction Temperature Storage Tem...