SPP5413

SPP5413 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP5413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPP5413 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Power Management in Note book  Powered System  DC/DC Converter  Load Switch FEATURES  -40V/-10A,RDS(ON)=26mΩ@VGS=-10V  -40V/- 8A,RDS(ON)=36mΩ@VGS=-4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L package design PIN CONFIGURATION TO-252-2L PART MARKING 2020/04/30 Ver.4 Page 1 SPP5413 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPP5413T252RGB TO-252-2L ※ SPP5413T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPP5413 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.14mH , IAS = 43A , VDD = 20V. ) Operating Junction Temperature Storage Temperatu...