SPN6001

SPN6001 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6001 is the N-Channel enhancement mode field effect transistors that are produced using high cell density DMOS technology. APPLICATIONS  High efficiency SMPS  AC adapter  Electronic Lamp Ballast FEATURES  600V/1.0A , RDS(ON)=15Ω@VGS=10V  TO-92 package design  Fast switch, Low Ciss, Low gate charge  PIN CONFIGURATION(TO-92) 2020/04/17 Ver.2 PART MARKING Page 1 SPN6001 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN6001T92AGB TO-92 ※ Week Code : 01~53 ※ SPN6001T92AGB : Tape Ammo ; Pb – Free ; Halogen - Free Part Marking SPN6001 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage - Continuous Gate –Source Voltage - Non Repetitive ( tp < 50μs) Continuous Drain Current(TJ=150℃) TA=25℃ Pulsed Drain Current () Power Dissipation Operating Junction Temperature TA=25℃ Storage Temperature Range Thermal Resistance-Junction to Ambient () Pulse width limited by safe operating area Symbol VDSS VGSS VGSS ID IDM PD TJ TSTG RθJA Typical 600 ±20 ±40 1 2.5 3 -55 ~ 150 -55 ~ 150 120 Unit V V V A A W ℃ ℃ ℃/W 2020/04/17 Ver.2 Page 2 SPN6001 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage G...