SPP4931W
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP4931W is the Dual P-Channel logic enhancement mode power f...
SPP4931W
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP4931W is the Dual P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES -20V/-8.5A,RDS(ON)= 20mΩ@VGS=-4.5V -20V/-8.0 A,RDS(ON)= 25mΩ@VGS=-2.5V -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP-8P package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2011/10/04 Ver.2
Page 1
SPP4931W
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin 1 2 3 4 5 6 7 8
ORDERING INFORMATION Part Number SPP4931WS8RGB
Symbol S1 G1 S2 G2 D2 D2 D1 D1
Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1
Package SOP- 8P
Part
Marking
SPP4931W
※ SPP4931WS8RGB : 13” Tape Reel ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power ...