SPC4567

SPC4567 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4567 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES N-Channel  40V/6.0A,RDS(ON)=53mΩ@VGS=10V  40V/5.0A,RDS(ON)=63mΩ@VGS=4.5V  40V/4.5A,RDS(ON)=78mΩ@VGS=2.5V P-Channel  -40V/-7.2A,RDS(ON)=95mΩ@VGS=-10V  -40V/-5.0A,RDS(ON)=110mΩ@VGS=-4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) PART MARKING 2020/03/25 Ver.2 Page 1 SPC4567 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 ORDERING INFORMATION Part Number Package SPC4567S8RGB SOP-8 ※ SPC4567S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free Part Marking SPC4567 ABSOULTE MAXIMUM RATINGS (TA=25℃ ...