SPC1810

SPC1810 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC1810 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 100V/5A,RDS(ON)=160mΩ@VGS=10V  P-Channel -100V/-8A,RDS(ON)=160mΩ@VGS=-10V -100V/-4A,RDS(ON)=200mΩ@VGS=-4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) PART MARKING 2020/03/26 Ver.2 Page 1 SPC1810 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 ORDERING INFORMATION Part Number Package SPC1810S8RGB SOP- 8 ※ SPC1810S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free Part Marking SPC1810 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage Ga...