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MURS105T3G Dataheets PDF



Part Number MURS105T3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Ultrafast Power Rectifiers
Datasheet MURS105T3G DatasheetMURS105T3G Datasheet (PDF)

DATA SHEET www.onsemi.com Power Rectifier, Ultra-Fast Recovery, 1 A, 50-600 V ULTRAFAST RECTIFIERS 1.0 AMPERE, 50−600 VOLTS MURS105, MURS110, MURS115, MURS120, MURS140, MURS160, SURS8105, SURS8110, SURS8120, SURS8140, SURS8160, NRVUS110V, NRVUS120V, NRVUS160V Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable P.

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DATA SHEET www.onsemi.com Power Rectifier, Ultra-Fast Recovery, 1 A, 50-600 V ULTRAFAST RECTIFIERS 1.0 AMPERE, 50−600 VOLTS MURS105, MURS110, MURS115, MURS120, MURS140, MURS160, SURS8105, SURS8110, SURS8120, SURS8140, SURS8160, NRVUS110V, NRVUS120V, NRVUS160V Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • High Temperature Glass Passivated Junction • Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C) • NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 95 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Polarity: Polarity Band Indicates Cathode Lead • ESD Rating: ♦ Human Body Model = 3B (> 8 kV) ♦ Charged Device Model > 1000 V SMB CASE 403A MARKING DIAGRAM AYWW U1x G G A = Assembly Location* Y = Year WW = Work Week U1 = Device Code x = A, B, C, D, G, or J G = Pb−Free Package (Note: Microdot may be in either location) * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the table on page 2 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking table on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 20217 1 August, 2023 − Rev. 18 Publication Order Number: MURS120T3/D MURS105, MURS110, MURS115, MURS120, MURS140, MURS160, SURS8105, SURS8110, SURS8120, SURS8140, SURS8160, NRVUS110V, NRVUS120V, NRVUS160V MAXIMUM RATINGS MURS/SURS8/NRVUS Rating Symbol 105T3 110T3 115T3 120T3 140T3 160T3 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current VRRM VRWM VR IF(DC) Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 50 100 150 200 400 600 V 1.0 @ TL = 159°C 2.0 @ TL = 139°C 35 1.0 @ TL = 159°C A 2.0 @ TL = 139°C 35 A Operating Junction Temperature TJ *65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS MURS/SURS8/NRVUS Rating Symbol 105T3 110T3 115T3 120T3 140T3 160T3 Thermal Resistance RqJL Junction−to−Lead (TL = 25°C) 13 ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise noted) Maximum Instantaneous Forward Voltage (Note 1) vF (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C) 0.875 0.71 1.25 1.05 Maximum Instantaneous Reverse Current (Note 1) iR (Rated DC Voltage, TJ = 25°C) 2.0 5.0 (Rated DC Voltage, TJ = 150°C) 50 150 Maximum Reverse Recovery Time trr (iF = 1.0 A, di/dt = 50 A/ms, VR = 30 V) 35 75 (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) 25 50 Maximum Forward Recovery Time tfr (iF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V) 25 50 Typical Peak Reverse Recovery Current IRM 0.75 (IF = 1.0 A, di/dt = 50 A/ms) 1.60 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. Unit °C/W V mA ns ns A DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping† MURS105T3G, SURS8105T3G* U1A SMB 2,500 Units / Tape & Reel (Pb−Free) MURS110T3G, NRVUS110VT3G*, U1B NRVUS110VT3G−GA01*, SURS8110T3G* SMB (Pb−Free) 2,500 Units / Tape & Reel MURS115T3G, SURS8115T3G* U1C SMB (Pb−Free) 2,500 Units / Tape & Reel MURS120T3G, NRVUS120VT3G*, NRVUS120VT3G−GA01*, SURS8120T3G* MURS140T3G, SURS8140T3G* U1D U1G SMB (Pb−Free) SMB (Pb−Free) 2,500 Units / Tape & Reel 2,500 Units / Tape & Reel MURS160T3G, NRVUS160VT3G*, U1J NRVUS160VT3G−GA01*, SURS8160T3G* SMB (Pb−Free) 2,500 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MURS105, MURS110, MURS115, MURS120, MURS140, MURS160, SURS8105, SURS8110, SURS8120, SURS8140, SURS8160, NRVUS110V, NRVUS120V, NRVUS160V MURS105T3G, MURS110T3G.


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