BLW86
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW86 is Designed for Class C, 28 V High Band Applications u...
BLW86
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI BLW86 is Designed for Class C, 28 V High Band Applications up to 175 MHz.
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
Common Emitter PG = 7.0 dB at 40 W/175 MHz Omnigold™ Metalization System
E
C
Ø.125 NOM. FULL R J .125
B
C D F E
E
MAXIMUM RATINGS
IC VCBO VCE0 VEBO PDISS TJ TSTG θJC 5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.9 °C/W
DIM A B C D E F G H I J
I GH
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVCBO BVEBO ICBO ICES hFE Cob PG ηC
TC = 25 °C
NONETEST CONDITIONS
IC = 200 mA IC = 200 mA IC = 10 mA IE = 10 mA VCB = 30 V VCE = 30 V VCE = 5.0 V VCB = 30 V VCE = 28 V PIN = 7.0 W IC = 500 mA f = 1.0 MHz f = 175 MHz
MINIMUM TYPICAL MAXIMUM
35 65 65 4.0 1.0 10 5.0 200 65 7.6 60
UNITS
V V V V mA mA --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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