SD13007
NPN Silicon Transistor for high-voltage,high-speed power switching .
TO-220 Plastic Package
Absolute Maximum R...
SD13007
NPN Silicon
Transistor for high-voltage,high-speed power switching .
TO-220 Plastic Package
Absolute Maximum Ratings (Ta=25
o
C) Symbol Value 700 400 9 8 80 150 -55 to +150 Unit V V V A W
O O
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO IC Ptot TJ TS
C C
G S P FORM A IS AVAILABLE
РАДИОТЕХ-ТРЕЙД
®
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта:
[email protected] Веб: www.rct.ru
SD13007
Characteristics at Ta=25 OC Symbol DC Current Gain at VCE=5V, IC=2A Collector Emitter Breakdown Voltage at IC=10mA Collector Base Breakdown Voltage at IC=100µA Emitter Base Breakdown Voltage at IE=1mA Collector Cutoff Current at VCB=700V Emitter Cutoff Current at VEB=9V Collector-Emitter Saturation Voltage at IC=5A, IB=1A Base-Emitter Saturation Voltage at IC=5A, IB=1A Current-Gain-Bandwidth Product at VCE=10V, IC=0.5A Output Capacitance at VCB=10V, f=0.1MHz Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. COB 110 pF fT 4 MHz VBE(sat) 1.6 V VCE(sat) 2 V IEBO 100 µA ICBO 100 µA V(BR)EBO 9 V V(BR)CBO 700 V V(BR)CEO 400 V hFE 10 70 Min. Typ. Max. Unit
G S P FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002
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