SPN2302D

SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V  20V/3.1A,RDS(ON)=113mΩ@VGS=2.5V  20V/2.8A,RDS(ON)=140mΩ@VGS=1.8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 2018/01/09 Ver.4 Page 1 SPN2302D N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number SPN2302DS23RGB Package SOT-23 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2302DS23RGB : Tape Reel ; Pb – Free; Halogen – Free Part Marking S02 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Co...