SPP3407W

SPP3407W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ‹ -30V/-4.0A,RDS(ON)= 70mΩ@VGS=- 10V ‹ -30V/-3.2A,RDS(ON)= 95mΩ@VGS=-4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOT-23 package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter PIN CONFIGURATION(SOT-23) PART MARKING S07WYW S07W : Device Specific code 2011/03/10 Ver.1 Page 1 SPP3407W P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 ORDERING INFORMATION Part Number SPP3407WS23RG ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3407WS23RG : Tape Reel ; Pb – Free Package SOT-23 Part Marking S07WYW Symbol G S D Description Gate Source Drain ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode C...