6MBI100S-060

SPECIFICATION Device Name Type Name Spec. No. : : : IGBT Module 6MBI100S-060 MS5F 5327 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 27 ’03 Y.Kobayashi Jan. 27 ’03 T.Miyasaka T.Fujihira K.Yamada MS5F5327 1 13 H04-004-07 Revised Records Date Classification Ind. Content Applied date Drawn Checked T.Miyasaka Approved Jan.- 27 - ’03 enactment Issued date K.Yamada T.Fujihira MS5F5327 2 13 H04-004-06 6MBI100S-060 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit 21(P) 13(P) 1(Gu) 2(Eu) 5(Gv) 6(Ev) 19(U) 9(Gw) 10(Ew) 17(V) 15(W) 3(Gx) 4(Ex) 20(N) 7(Gy) 8(Ey) 11(Gz) 12(Ez) 14(N) MS5F5327 3 13 H04-004-03 3. Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified ） Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols V CES V GES Ic Ic pulse -Ic -Ic pulse Collector Power Dissipation Junction temperature Storage temperature Isolation voltage (*1) (*2) Conditions Maximum Ratings 600 +-20 100 200 100 200 400 150 -40~ +125 Units V V A Continuous 1ms 1ms 1 device Pc Tj Tstg Viso W C C V Nm AC : 1min. 2500 3.5 Mounting Screw Torque (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : 2.5~3.5 Nm (M5) 4. Electrical characteristics ( at Tj= 25C unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Revers...