Document
ESMT
Preliminary
AD51652
3W Mono Filter-less Class-D Audio Amplifier
Features
Supply voltage range: 2.5 V to 5.5 V Support single-ended or differential analog input Low Quiescent Current Low Output Noise Low shut-down current Short power-on transient time Internal pull-low resistor on shut-down pins Short-circuit protection Over-temperature protection Loudspeaker power within 10% THD+N 1.78W/ch into 8Ω loudspeaker >3W/ch into 4Ω loudspeaker Loudspeaker efficiency 93% @ 8Ω, THD+N=10% 85% @ 4Ω, THD+N=10% MSOP-8L, TDFN-8L and 0.4mm ball pitch WLCSP-9L packages Integrated Feedback Resistor of 300kΩ
Applications
Monitor audio PDA Portable multimedia devices Notebook computer Mobile phone
Description
The AD51652 is a 3.0W mono, filter-less class-D audio amplifier. Operating with 5.0V loudspeaker driver supply, it can deliver 3.0W output power into 4 Ω loudspeaker within 10% THD+N or 2.6W at 1% THD+N. The AD51652 is a mono audio amplifier with high efficiency and suitable for the notebook computer, and portable multimedia device.
Functional Block Diagram
Gain=300k /Rin
~150k
VDD
+
Cin
Rin
INP
+
Rin INN
PWM Generator Loudspeaker Driver
VOP
Differential input Cin
-
-
+
VON ~150k
SD ~300k
-wave Generator Overload, Voltage & Thermal Protection
GND
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2014 Revision: 0.03 1/18
ESMT
Typical Application Circuit
Preliminary
AD51652
VDD
Cin Rin CS2 0.1uF CS1 2.2uF
INP
1uF 150kΩ
AD51652 Filterless Class-D
Cin Rin
INN
1uF 150kΩ
VOP
VON
ON
SD
OFF
GND
Note. Gain=2 V/V
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2014 Revision: 0.03 2/18
ESMT
Pin Assignments MSOP-8
Preliminary
AD51652
Order information
AD51652-MH08NRR MH08 MSOP-8 Package
NRR
RoHS & Halogen free
Rating: -40 to 85° C Package in Tape & Reel
TDFN-8
Order information
AD51652-FH08NRR FH08 NRR TDFN-8 Package
RoHS & Halogen free
Rating: -40 to 85° C Package in Tape & Reel
WLCSP-9
Order information
AD51652-WL09NRR WL09 NRR WLCSP-9 Package
RoHS & Halogen free
Rating: -40 to 85° C Package in Tape & Reel
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2014 Revision: 0.03 3/18
ESMT
Pin Description
NAME MSOP-8 SD INP NC INN VOP VDD GND VON Thermal pad 1 2 3 4 5 6 7 8 N/A PIN TDFN-8 1 3 2 4 5 6 7 8 9
Preliminary
AD51652
IO WLCSP-9 C2 A1 N/A C1 C3 B2 A2, B3 A3 N/A TYPE I I NC I O P G O G
DESCRIPTION Shutdown AD51652 (Low active logic) Positive differential input No internal connect Negative differential input Positive output Power supply Power ground Negative output Must be connected the package thermal pad to PCB thermal land.
Available Package
Package Type MSOP-8 TDFN-8 (3x3mm) WLCSP-9 AD51652 Device no. θJA ( C/W) 190 45.8 128
o
Exposed Thermal Pad No Yes No
Absolute Maximum Ratings
SYMBOL VDD Tstg TJ PARAMETER Supply for analog cells & loudspeaker driver Input pins voltage Storage temperature Junction operating temperature MIN -0.3 -0.3 -65 -40 MAX 6.0 5.5 150 150 UNIT V V
o o
C C
Recommended Operating Conditions
SYMBOL VDD VIH VIL TJ Ta PARAMETER Supply for analog cells & loudspeaker driver High-Level Input Voltage Low-Level Input Voltage Junction operating temperature Ambient Operating Temperature MIN 2.5 1.3 -40 -40 MAX 5.5 0.35 125 85 UNIT V V V ℃ ℃
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2014 Revision: 0.03 4/18
ESMT
SYMBOL Iq IPD Voffset Tsd Thys fsw AV Ton RSC PARAMETER Operating current Supply current during power-down mode Output offset voltage Junction temperature for driver shutdown Temperature hysteresis for recovery from shutdown Switching rate of loudspeakers driver Gain Turn-on time Loudspeaker short-circuit detect resistance
Preliminary
AD51652
General Electrical Characteristics (TA=25℃)
CONDITION VDD=SD=5V, Output switching VDD=5.5V; SD#=0 Input ac grounded, VDD=2.5V ~ 5.5V <1 <1 165 20 250
270kΩ Rin
MIN
TYP 3
MAX
UNIT mA µΑ
5
mV
o
C C
o
300
300kΩ Rin
350
330kΩ Rin
kHz V/V msec ohm
VDD = 3.6 V VDD = 5.0 V
1.7 2.8
4 3.2
Electrical Characteristics and Specifications for Loudspeaker
Gain= 2 V/V, Load=8Ω, fin=1 kHz, CS1=2.2uF, CS2=0.1uF, TA=25℃ (unless otherwise noted) SYMBOL PARAMETER CONDITION VDD=5.0V PO RMS Output Power VDD=3.6V VDD=2.5V Total Harmonic Distortion plus Noise Signal to Noise Ratio Power Supply Rejection Ratio Common-Mode Rejection Output integrated noise (A-weighted) Efficiency (TDFN-8L) THD+N = 10 % THD+N = 1 % THD+N = 10 % THD+N = 1 % THD+N = 10 % THD+N = 1 % MIN TYP 1.78 1.44 0.91 0.74 0.43 0.35 0.035 0.039 0.058 98 74 76 23 90 MAX UNIT W W W W W W % % % dB dB dB µV %
VDD=5.0V, Po=1.0W VDD=3.6V, Po=0.5W VDD=2.5V, Po=0.2W VDD=5.0V, Po=1.0W VDD=3.6V, Vripple=200mVpp Inputs ac grounded with Ci=2µF f=217 Hz VDD=3.6V, VIC=1Vpp, f=217Hz VDD=3.6V fin=20Hz ~ 20kHz VDD=5V, THD+N=10%
THD+N SNR PSRR CMRR Vn η
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2014 Revision: 0.03 5/18
ESMT
SYMBOL PARAMETER
Preliminary
AD5.