NAND01G-B2B

NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Features ■ High density NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities Supply voltage: 1.8 V/3.0 V Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words Block size – x8 device: (128 K + 4 K spare) bytes – x16 device: (64 K + 2 K spare) words Page read/program – Random access: 25 µs (max) – Sequential access: 30 ns (min) – Page program time: 200 µs (typ) Copy back program mode Cache program and cache read modes Fast block erase: 2 ms (typ) Status register Electronic signature Chip enable ‘don’t care’ ■ ■ ■ ■ ■ TSOP48 12 x 20 mm FBGA ■ ■ VFBGA63 9.5 x 12 x 1 mm VFBGA63 9 x 11 x 1 mm ■ Serial number option Data protection – Hardware block locking – Hardware program/erase locked during power transitions Data integrity – 100 000 program/erase cycles per block (with ECC) – 10 years data retention ECOPACK® packages Development tools – Error correction code models – Bad blocks management and wear leveling algorithms – Hardware simulation models ■ ■ ■ ■ ■ ■ ■ ■ Table 1. Device summary Reference NAND01G-B2B Part number NAND01GR3B2B, NAND01GW3B2B NAND01GR4B2B, NAND01GW4B2B(1) NAND02GR3B2C, NAND02GW3B2C NAND02G-B2C NAND02GR4B2C, NAND02GW4B2C(1) 1. x16 organization only available for MC...