2SK3995

This product complies with the RoHS Directive (EU 2002/95/EC). Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP  Features  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive  Package  Code TO-220C-G1  Marking Symbol: K3995  Pin Name 1. Gate 2. Drain 3. Source Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current *1 VDSS VGSS ID IDP Drain reverse current IDR Peak drain reverse current *1 IDRP Avalanche energy capability *2 Drain power dissipation Junction temperature Storage temperature EAS PD Tj TC = 25°C Ta = 25°C *3 Tstg  Electrical Characteristics TC = 25°C±3°C Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage ce /D isc Parameter on tin Symbol VDSS IDSS IGSS Vth ue Note) *1: PW ≤ 10 ms, Duty ≤ 1.0% *2: Avalanche energy capability guaranteed *3: Without heat sink di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 200 30 30 V V ±30 120 120 801 50 1.4 A A A A M Di ain sc te on na tin nc ue e/ d  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit mJ W W 150 °C °C -55 to +150 Conditions Min 20...