ELM1314-30F-001

ELM1314-30F/001 Ku-Band Internally Matched FET FEATURES High Output Power: P1dB=44.5dBm(typ.) High Gain: G1dB=5.5dB(typ.) High PAE: ηadd=22%(typ.) Broad Band: 13.75 to 14.5GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The ELM1314-30F/001 is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage (Tc=25deg.C) Gate-Source Voltage (Tc=25deg.C) Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 115.3 -55 to +125 175 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Storage Tem perature Channel Tem perature Sym bol V DS IGF IGR Tstg Tch Condition RG=24 ohm RG=24 ohm -55 to +125 ≤+155 Lim it ≤10 ≤78.0 ≥-16.9 Unit V mA mA deg.C deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P. Pow er Gain at 1dB G.C.P. Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion Therm al Resistance Channel Tem perature Rise CASE STYLE : M2A Sym bol IDSS gm Vp V GSO P1dB G1dB Idsr Nadd ∆G IM3 Rth ∆Tch Condition V DS=5V , V GS=0V V DS=5V , IDS=8A V DS=5V , IDS=700mA IGS=-700uA V DS=10V f= 13.75 to 14.5 GHz IDSDC=7.0A (typ.) Zs=ZL=50 ohm f=14.5 GHz ∆f=10MHz ，2...